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| inchange semiconductor product specification silicon npn power transistors BU508 description ? with to-3pn package ? high voltage ? high speed switching applications ? for use in horizontal def lection circuits of large screen colour tv receivers. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 8 a i cm collector current (pulse) 15 a p c collector power dissipation t c =25 ?? 125 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 1.0 ??/w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU508 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 10 v v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 700 v v cesat collector-emitter saturation voltage i c =4.5a; i b =2a 5.0 v v besat base-emitter saturation voltage i c =4.5a; i b =2a 1.3 v i ces collector cut-off current v ce =1500v; v be =0 t c =125 ?? c 1.0 2.0 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe dc current gain i c =1a ; v ce =5v 8 f t transition frequency i c =0.1a ; v ce =5v 7 mhz t s storage time 7 | s t f fall time i c =4.5a ; v cc =140v i b =1.8a; l c =0.9mh l b =3 | h 0.55 | s inchange semiconductor product specification 3 silicon npn power transistors BU508 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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